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| ■光通信: フォトダイオード |
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| ■製品概要/Product Overview |
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| The PDCS200E-LE is an edge-illuminated InGaAs/InP monitor photodiode chip implemented on an n- type InP substrate with a cathode backside contact. The edge-illuminated photodiode structure is opti- mized for edge emitting DFB and FP lasers used in data- and telecom applications for the wavelength region from 1260 to 1620 nm. The photodiode die is manufactured with a wire-bondable anode front-side pad and a solderable cathode backside pad. Optional, the backside pad is available with AuSn solder deposited. |
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PDFファイル: 337kb
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| ■特徴/Key Features |
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・ Side illuminated, low entry InGaAs monitor photodiode,
without the need for a “wrap-around” submount
・ Angled side facet for high coupling efficiency
・ Large active area: 180 x 220 μm
・ Low bias voltage: 1.5 V
・ Operating temperature range: -40 to 85°C |
| ■アプリケーション/Application |
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